MMBF4392LT1G datasheet(1/6 Pages) ONSEMI

Part #	MMBF4392LT1G

Description	JFET Switching Transistors

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October, 2016 − Rev. 12

1

Publication Order Number:

MMBF4391LT1/D

MMBF4391L, MMBF4392L,

MMBF4393L

JFET Switching Transistors

N−Channel

Features

• S Prefix for Automotive and Other Applications Requiring Unique

Site and Control Change Requirements; AEC−Q101 Qualified and

PPAP Capable

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Drain−Source Voltage

VDS

30

Vdc

Drain−Gate Voltage

VDG

30

Vdc

Gate−Source Voltage

VGS

30

Vdc

Forward Gate Current

IG(f)

50

mAdc

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR− 5 Board

(Note 1) TA = 25°C

Derate above 25°C

PD

225

1.8

mW

mW/°C

Thermal Resistance, Junction−to−Ambient

RqJA

556

°C/W

Junction and Storage Temperature Range

TJ, Tstg −55 to +150

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. FR−5 = 1.0 0.75 0.062 in.

SOT−23

CASE 318

STYLE 10

See detailed ordering, marking and shipping information in the

package dimensions section on page 2 of this data sheet.

MARKING & ORDERING INFORMATION

www.onsemi.com

2 SOURCE

3

GATE

1 DRAIN

XXX = Specific Device Code

M

= Date Code*

G

= Pb−Free Package

*Date Code orientation and/or overbar may

vary depending upon manufacturing location.

(Note: Microdot may be in either location)

MARKING DIAGRAM

1

XXX M G

G

2

1

3

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