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NGTD8R65F2WP Datasheet(PDF) 2 Page - ON Semiconductor |
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NGTD8R65F2WP Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 3 page NGTD8R65F2 www.onsemi.com 2 ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified) Parameter Test Conditions Symbol Min Typ Max Units STATIC CHARACTERISTICS Forward Voltage IF = 30 A, TJ = 25°C VF 2.1 2.8 V Reverse Voltage IR = 320 mA, TJ = 25°C VR 650 V Reverse Current VR = 650 V, TJ = 25°C IR −1.0 1.0 mA Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. DIE LAYOUT A = Anode pad All dimensions in mm A |
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