NGTD20T120F2SWK datasheet(1/3 Pages) ONSEMI

Part #	NGTD20T120F2SWK

Description	IGBT Die

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Manufacturer	ONSEMI [ON Semiconductor]

Direct Link	http://www.onsemi.com

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March, 2016 − Rev. 0

1

Publication Order Number:

NGTD20T120F2WP/D

NGTD20T120F2

IGBT Die

Trench Field Stop II IGBT Die for motor drive and inverter

applications.

Features

• Extremely Efficient Trench with Field Stop Technology

• Low VCE(sat) Loss Reduces System Power Dissipation

Typical Applications

• Industrial Motor Drives

• Solar Inverters

• UPS Systems

• Welding

MAXIMUM RATINGS

Parameter

Symbol

Value

Unit

Collector−Emitter Voltage, TJ =25°C

VCE

1200

V

DC Collector Current, limited by

TJ(max)

IC

(Note 1)

A

Pulsed Collector Current (Note 2)

IC, pulse

100

A

Gate−Emitter Voltage

VGE

±20

V

Maximum Junction Temperature

TJ

−55 to +175

°C

Short Circuit Withstand Time,

VGE = 15 V, VCE = 500V, TJ ≤ 150°C

TSC

10

ms

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. Depending on thermal properties of assembly.

2. Tpulse limited by Tjmax, 10 ms pulse, VGE = 15 V.

MECHANICAL DATA

Parameter

Value

Unit

Die Size

5129 x 3695

mm2

Emitter Pad Size

See die layout

mm2

Gate Pad Size

400 x 670

mm2

Die Thickness

5

mils

Wafer Size

150

mm

Top Metal

5

mm AlSi

Back Metal

2

mm TiNiAg

Max possible chips per wafer

766

Passivation frontside

Oxide−Nitride

Reject ink dot size

25 mils

Recommended storage environment:

In original container, in dry nitrogen,

or temperature of 18−28

°C,

30−65%RH

Type: Bare

Wafer in Jar

Storage time:

< 36 months

Type: Die on

tape in

ring−pack

Storage time:

< 3 months

ORDERING INFORMATION

Device

Inking?

Shipping

NGTD20T120F2WP

Yes

Bare Wafer in Jar

NGTD20T120F2SWK

Yes

Sawn Wafer on Tape

www.onsemi.com

DIE OUTLINE

VRCE = 1200 V

IC = Limited by TJ(max)

IGBT DIE

G

C

E

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