NGTB15N60EG datasheet(5/10 Pages) ONSEMI

Part #	NGTB15N60EG

Description	IGBT - Short-Circuit Rated

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Manufacturer	ONSEMI [ON Semiconductor]

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NGTB15N60EG

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TYPICAL CHARACTERISTICS

VCES = 120 V

VCES = 480 V

IC = 15 A

20

0

Figure 7. Diode Forward Characteristics

VF, FORWARD VOLTAGE (V)

Figure 8. Typical Gate Charge

QG, GATE CHARGE (nC)

−40

°C

25

°C

150

°C

0

0.5

1

1.5

2

2.5

35

30

25

20

15

10

5

0

15

10

5

0

20

40

60

100

80

Figure 9. Switching Loss vs. Temperature

TJ, JUNCTION TEMPERATURE (°C)

Eon

Eoff

0

20

40

60

100

120

140

160

80

1.2

1

0.8

0.6

0.4

0.2

0

VCE = 400 V

VGE = 15 V

IC = 15 A

Rg = 22

W

Figure 10. Switching Time vs. Temperature

TJ, JUNCTION TEMPERATURE (°C)

tf

td(off)

td(on)

tr

1000

100

10

1

0

20

40

60

100 120

140 160

80

200

180

VCE = 400 V

VGE = 15 V

IC = 15 A

Rg = 22

W

Figure 11. Switching Loss vs. IC

IC, COLLECTOR CURRENT (A)

Eon

Eoff

3

812

24

28

16

32

20

2

1

0

VCE = 400 V

VGE = 15 V

TJ = 150°C

Rg = 22

W

Figure 12. Switching Time vs. IC

IC, COLLECTOR CURRENT (A)

tf

td(off)

td(on)

tr

1000

100

10

1

812

24

28

16

32

20

VCE = 400 V

VGE = 15 V

TJ = 150°C

Rg = 22

W

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NGTB15N60EG Datasheet(PDF) 5 Page - ON Semiconductor

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