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RBR3MM40B Datasheet(PDF) 1 Page - Rohm |
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RBR3MM40B Datasheet(HTML) 1 Page - Rohm |
1 / 9 page Data Sheet www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. Schottky Barrier Diode RBR3MM40B lApplication lDimensions (Unit : mm) lLand Size Figure (Unit : mm) General rectification lFeatures 1) Small power mold type (PMDU) 2) High reliability 3) Low VF lStructure lConstruction lTaping Dimensions (Unit : mm) Silicon epitaxial planar type lAbsolute Maximum Ratings (T c= 25°C) Repetitive peak reverse voltage VRM V Reverse voltage VR V Operating junction temperature Tj °C Storage temperature Tstg °C lElectrical Characteristics (T j= 25°C) Symbol Min. Typ. Max. Unit VF - - 0.58 V Reverse current IR - - 100 mA Parameter 40 150 -55 to +150 VR=40V Direct reverse voltage 3 IF=3.0A Conditions non-repetitive at Ta=25ºC - - Forward voltage Symbol Limits Unit 40 Parameter Conditions Duty≦0.5 A IFSM Non-repetitive forward current surge peak 60Hz half sin wave, one cycle, 30 A Average forward rectified current Io Glass epoxy board mounted, 60Hz half sin wave, resistive load , Tc=45ºC Max. PMDU Anode Cathode ROHM : PMDU : Manufacture Date JEDEC : SOD-123FL 1.2 4.0±0.1 2.0±0.05 φ 1.55±0.05 1.81±0.1 4.0±0.1 φ 1.0±0.1 0.25±0.05 1.5MAX f f 0.9±0.1 1.6±0.1 0.8±0.1 0.1±0.05 0.1 1/5 2016.05 - Rev.C |
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