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VS-20MQ100HM3 Datasheet(PDF) 2 Page - Vishay Siliconix |
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VS-20MQ100HM3 Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 6 page VS-20MQ100HM3 www.vishay.com Vishay Semiconductors Revision: 17-Dec-14 2 Document Number: 94840 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Note (1) Pulse width = 300 μs, duty cycle = 2 % Note (1) thermal runaway condition for a diode on its own heatsink ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum forward voltage drop See fig. 1 VFM (1) 2 A TJ = 25 °C 0.91 V 1.5 A 0.85 1 A 0.78 2 A TJ = 125 °C 0.72 1.5 A 0.68 1 A 0.63 Maximum reverse leakage current See fig. 2 IRM TJ = 25 °C VR = Rated VR 0.1 mA TJ = 125 °C 1 Threshold voltage VF(TO) TJ = TJ maximum 0.52 V Forward slope resistance rt 78.4 m Typical junction capacitance CT VR = 10 VDC, TJ = 25 °C, test signal = 1 MHz 38 pF Typical series inductance LS Measured lead to lead 5 mm from package body 2.0 nH Maximum voltage rate of change dV/dt Rated VR 10 000 V/μs THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction and storage temperature range TJ (1), TStg -55 to +150 °C Maximum thermal resistance, junction to ambient RthJA DC operation 80 °C/W Approximate weight 0.07 g 0.002 oz. Marking device Case style SMA (similar D-64) 2J dP tot dT J ------------- 1 R thJA -------------- < |
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