VFT1060C-E3 datasheet(2/6 Pages) VISHAY

Part #	VFT1060C-E3

Description	Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 2.5 A

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Manufacturer	VISHAY [Vishay Siliconix]

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VT1060C-E3, VFT1060C-E3 VBT1060C-E3, VIT1060C-E3

www.vishay.com

Vishay General Semiconductor

Revision: 14-Dec-16

2

Document Number: 89131

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Notes

(1) Pulse test: 300 μs pulse width, 1 % duty cycle

(2) Pulse test: Pulse width

 40 ms

ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER

TEST CONDITIONS

SYMBOL

TYP.

MAX.

UNIT

Instantaneous forward voltage per diode (1)

IF = 2.5 A

TA = 25 °C

VF

0.49

-

V

IF = 5.0 A

0.58

0.70

IF = 2.5 A

TA = 125 °C

0.39

-

IF = 5.0 A

0.50

0.60

Reverse current per diode (2)

VR = 60 V

TA = 25 °C

IR

-

700

μA

TA = 125 °C

6.9

25

mA

THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

VT1060C

VFT1060C

VBT1060C

VIT1060C

UNIT

Typical thermal resistance

per diode

RJC

3.5

6.5

3.5

°C/W

per device

2.5

5.0

2.5

ORDERING INFORMATION (Example)

PACKAGE

PREFERRED P/N

UNIT WEIGHT (g)

PACKAGE CODE

BASE QUANTITY

DELIVERY MODE

TO-220AB

VT1060C-E3/4W

1.87

4W

50/tube

Tube

ITO-220AB

VFT1060C-E3/4W

1.75

4W

50/tube

Tube

TO-263AB

VBT1060C-E3/4W

1.39

4W

50/tube

Tube

TO-263AB

VBT1060CE3/8W

1.39

8W

800/reel

Tape and reel

TO-262AA

VIT1060C-E3/4W

1.45

4W

50/tube

Tube

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VFT1060C-E3 Datasheet(PDF) 2 Page - Vishay Siliconix

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