SI4410BDY-T1 datasheet(4/6 Pages) VISHAY

Part #	SI4410BDY-T1

Description	N-Channel 30-V (D-S) MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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Si4410BDY

Vishay Siliconix

www.vishay.com

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Document Number: 72211

S-50366—Rev. C, 28-Feb-05

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

VDS − Drain-to-Source Voltage (V)

*VGS u minimum VGS at which rDS(on) is specified

0

30

50

10

20

Single Pulse Power

Time (sec)

40

10−3

10−2

1

10

600

10−1

10−4

100

2

1

0.1

0.01

0.2

0.1

0.05

0.02

Single Pulse

Duty Cycle = 0.5

Normalized Thermal Transient Impedance, Junction-to-Ambient

Square Wave Pulse Duration (sec)

1. Duty Cycle, D =

2. Per Unit Base = RthJA = 70_C/W

3. TJM − TA = PDMZthJA(t)

t1

t2

t1

t2

Notes:

4. Surface Mounted

PDM

1

100

600

10

10−1

10−2

−1.0

−0.8

−0.6

−0.4

−0.2

0.0

0.2

0.4

0.6

−50

−25

0

25

50

75

100

125

150

ID = 250 mA

Threshold Voltage

TJ − Temperature (_C)

Safe Operating Area, Junction-to-Case

100

1

0.1

1

10

100

0.01

10

1 s

0.1

TA = 25_C

Single Pulse

10 ms

100 ms

dc, 100 s

*rDS(on) Limited

10 s

TA = 25_C

1 ms

100 ms, 10 ms

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