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PH2731-20M Datasheet(PDF) 1 Page - M/A-COM Technology Solutions, Inc. |
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PH2731-20M Datasheet(HTML) 1 Page - M/A-COM Technology Solutions, Inc. |
1 / 4 page Radar Pulsed Power Transistor 20W, 2.7-3.1 GHz, 100µs Pulse, 10% Duty Rev. V1 PH2731-20M 1 1 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support 1 Features NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Internal input and output impedance matching Hermetic metal/ceramic package RoHS compliant Electrical Specifications: TC = 25 ± 5°C (Room Ambient ) Parameter Test Conditions Frequency Symbol Min Max Units Collector-Emitter Breakdown Voltage IC = 10mA BVCES 65 - V Collector-Emitter Leakage Current VCE = 40V ICES - 1.5 mA Thermal Resistance Vcc = 36V, Pin = 3.0W F = 2.7, 2.9, 3.1 GHz RTH(JC) - 2.5 °C/W Output Power Vcc = 36V, Pin = 3.0W F = 2.7, 2.9, 3.1 GHz POUT 20 - W Power Gain Vcc = 36V, Pin = 3.0W F = 2.7, 2.9, 3.1 GHz GP 8.2 - dB Collector Efficiency Vcc = 36V, Pin = 3.0W F = 2.7, 2.9, 3.1 GHz C 45 - % Input Return Loss Vcc = 36V, Pin = 3.0W F = 2.7, 2.9, 3.1 GHz RL - -6 dB Load Mismatch Tolerance Vcc = 36V, Pin = 3.0W F = 2.7, 2.9, 3.1 GHz VSWR-T - 3:1 - Load Mismatch Stability Vcc = 36V, Pin = 3.0W F = 2.7, 2.9, 3.1 GHz VSWR-S - 1.5:1 - Absolute Maximum Ratings at 25°C Parameter Symbol Rating Units Collector-Emitter Voltage VCES 65 V Emitter-Base Voltage VEBO 3.0 V Collector Current (Peak) IC 1.85 A Power Dissipation @ +25°C PTOT 70 W Storage Temperature TSTG -65 to +200 °C Junction Temperature TJ 200 °C Outline Drawing |
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