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SI5915DC Datasheet(PDF) 3 Page - Vishay Siliconix |
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SI5915DC Datasheet(HTML) 3 Page - Vishay Siliconix |
3 / 4 page Si5915DC Vishay Siliconix Document Number: 70693 S-21251—Rev. B, 05-Aug-02 www.vishay.com 2-3 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.8 0.9 1.0 1.1 1.2 1.3 1.4 --50 --25 0 25 50 75 100 125 150 0 1 2 3 4 5 012 34 567 0.00 0.05 0.10 0.15 0.20 0.25 0 2468 10 VDS -- Drain-to-Source Voltage (V) Coss Ciss VDS =4 V ID =3.4 A ID -- Drain Current (A) VGS =4.5 V ID =3.4 A VGS =2.5 V VGS =4.5 V Gate Charge On-Resistance vs. Drain Current Qg -- Total Gate Charge (nC) Capacitance On-Resistance vs. Junction Temperature TJ -- Junction Temperature (_C) 0.00 0.05 0.10 0.15 0.20 0.25 0 1234 5 TJ = 150_C ID =3.4 A 10 1 Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage VSD -- Source-to-Drain Voltage (V) VGS -- Gate-to-Source Voltage (V) VGS =1.8 V TJ =25_C Crss 0 200 400 600 800 1000 02468 ID =1 A |
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