MBR1090CT-E3, MBR10100CT-E3

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Vishay General Semiconductor

Revision: 10-May-16

1

Document Number: 89125

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Dual Common Cathode High Voltage Schottky Rectifier

FEATURES

• Trench MOS Schottky technology

• Lower power losses, high efficiency

• Low forward voltage drop

• High forward surge capability

• High frequency operation

• Solder bath temperature 275 °C maximum, 10 s,

per JESD 22-B106

• Material categorization: for definitions of compliance

TYPICAL APPLICATIONS

For use in high frequency rectifier of switching mode power

supplies, freewheeling diodes, DC/DC converters or polarity

protection application

MECHANICAL DATA

Case: TO-220AB

Molding compound meets UL 94 V-0 flammability rating

Base P/N-E3 - RoHS-compliant, commercial grade

Terminals:

Matte

tin

plated

leads,

solderable

per

J-STD-002 and JESD 22-B102



E3 suffix meets JESD 201 class 1A whisker test

Polarity: As marked

Mounting Torque: 10 in-lbs max.







PRIMARY CHARACTERISTICS

2 x 5.0 A

90 V, 100 V

120 A

0.75 V

150 °C

Package

TO-220AB

Diode variation

Dual common cathode

TO-220AB

CASE

PIN 2

PIN 1

PIN 3

1

2

3

TMBS

®

PARAMETER

SYMBOL

MBR1090CT

MBR10100CT

UNIT

Max. repetitive peak reverse voltage

90

100

V

Working peak reverse voltage

90

100

V

Max. DC blocking voltage

90

100

V

total device

10

A

per diode

5.0

Peak forward surge current 8.3 ms single half sine-wave superimposed



on rated load per diode

120

A

60

mJ

0.5

A

dV/dt

10 000

V/μs

Operating junction and storage temperature range

-65 to +150

°C