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SKB04N60 Datasheet(PDF) 6 Page - Infineon Technologies AG

Part # SKB04N60
Description  Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

SKB04N60 Datasheet(HTML) 6 Page - Infineon Technologies AG

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SKP04N60
SKB04N60
6Jul-02
0A
2A
4A
6A
8A
10A
10ns
100ns
t
r
t
d(on)
t
f
t
d(off)
0
Ω
50
Ω
100
Ω
150
Ω
200
Ω
10ns
100ns
t
r
t
d(on)
t
f
t
d(off)
IC, COLLECTOR CURRENT
RG, GATE RESISTOR
Figure 9. Typical switching times as a
function of collector current
(inductive load, Tj = 150
°C, V
CE = 400V,
VGE = 0/+15V, RG = 67
Ω,
Dynamic test circuit in Figure E)
Figure 10. Typical switching times as a
function of gate resistor
(inductive load, Tj = 150
°C, V
CE = 400V,
VGE = 0/+15V, IC = 4A,
Dynamic test circuit in Figure E)
0°C
50°C
100°C
150°C
10ns
100ns
t
r
t
d(on)
t
f
t
d(off)
-50°C
0°C
50°C
100°C
150°C
2.0V
2.5V
3.0V
3.5V
4.0V
4.5V
5.0V
5.5V
typ.
min.
max.
Tj, JUNCTION TEMPERATURE
Tj, JUNCTION TEMPERATURE
Figure 11. Typical switching times as a
function of junction temperature
(inductive load, VCE = 400V, VGE = 0/+15V,
IC = 4A, RG = 67
Ω,
Dynamic test circuit in Figure E)
Figure 12. Gate-emitter threshold voltage
as a function of junction temperature
(IC = 0.2mA)


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