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SUD50N03-07-E3 Datasheet(PDF) 1 Page - Vishay Siliconix

Part # SUD50N03-07-E3
Description  N-Channel 30-V (D-S) 175C MOSFET
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SUD50N03-07-E3 Datasheet(HTML) 1 Page - Vishay Siliconix

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FEATURES
D TrenchFETr Power MOSFET
D 175_C Maximum Junction Temperature
D 100% Rg Tested
SUD50N03-07
Vishay Siliconix
Document Number: 70767
S-40272—Rev. E, 23-Feb-04
www.vishay.com
1
N-Channel 30-V (D-S) 175_C MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
ID (A)
30
0.007 @ VGS = 10 V
20
30
0.010 @ VGS = 4.5 V
16
D
G
S
N-Channel MOSFET
TO-252
S
GD
Top View
Drain Connected to Tab
Ordering Information:
SUD50N03-07
SUD50N03-07—E3 ( Lead Free)
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
30
V
Gate-Source Voltage
VGS
"20
V
Continuous Drain Currenta
TA = 25_C
ID
20
Continuous Drain Currenta
TA = 100_C
ID
14
A
Pulsed Drain Current
IDM
100
A
Continuous Source Current (Diode Conduction)a
IS
20
Maximum Power Dissipation
TC = 25_C
PD
136
W
Maximum Power Dissipation
TA = 25_C
PD
5a
W
Operating Junction and Storage Temperature Range
TJ, Tstg
−55 to 175
_C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambienta
RthJA
30
_C/W
Maximum Junction-to-Case
RthJC
0.85
1.1
_C/W
Notes
a.
Surface Mounted on FR4 Board, t v 10 sec.


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