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SUD50N03-07-E3 Datasheet(PDF) 1 Page - Vishay Siliconix |
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SUD50N03-07-E3 Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 4 page FEATURES D TrenchFETr Power MOSFET D 175_C Maximum Junction Temperature D 100% Rg Tested SUD50N03-07 Vishay Siliconix Document Number: 70767 S-40272—Rev. E, 23-Feb-04 www.vishay.com 1 N-Channel 30-V (D-S) 175_C MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 30 0.007 @ VGS = 10 V 20 30 0.010 @ VGS = 4.5 V 16 D G S N-Channel MOSFET TO-252 S GD Top View Drain Connected to Tab Ordering Information: SUD50N03-07 SUD50N03-07—E3 ( Lead Free) ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS "20 V Continuous Drain Currenta TA = 25_C ID 20 Continuous Drain Currenta TA = 100_C ID 14 A Pulsed Drain Current IDM 100 A Continuous Source Current (Diode Conduction)a IS 20 Maximum Power Dissipation TC = 25_C PD 136 W Maximum Power Dissipation TA = 25_C PD 5a W Operating Junction and Storage Temperature Range TJ, Tstg −55 to 175 _C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambienta RthJA 30 _C/W Maximum Junction-to-Case RthJC 0.85 1.1 _C/W Notes a. Surface Mounted on FR4 Board, t v 10 sec. |
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