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TLP741G Datasheet(PDF) 1 Page - Toshiba Semiconductor

Part No. TLP741G
Description  TOSHIBA Photocoupler GaAs Ired & Photo-Thyristor
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Maker  TOSHIBA [Toshiba Semiconductor]
Homepage  http://www.semicon.toshiba.co.jp/eng
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TLP741G
2002-09-25
1
TOSHIBA Photocoupler GaAs Ired & Photo
‚ąíThyristor
TLP741G
Office Machine
Household Use Equipment
Solid State Relay
Switching Power Supply
The TOSHIBA TLP741G consists of a photo-thyristor optically coupled to
a gallium arsenide infrared emitting diode in a six lead plastic DIP
package.
¬∑ Peak off‚ąístate voltage: 400V(min.)
· Trigger LED current: 10mA(max.)
¬∑ On‚ąístate current: 150mA(max.)
· UL recognized: UL1577, file no. E67349
· BSI approved: BS EN60065: 1994
Certificate no. 6617
BS EN60950: 1992
Certificate no. 7366
· Isolation voltage: 4000Vrms(min.)
· Option (D4) type
VDE approved: DIN VDE0884/08, 87
Certificate no. 65640
Maximum operating insulation voltage: 630VPK
Highest permissible over voltage: 6000VPK
(Note) When a VDE0884 approved type is needed,
please designate the "option (D4)"
7.62mm pich
10.16mm pich
standard type
(LF2) type
· Creepage distance:
7.0mm(min.)
8.0mm(min.)
Clearance:
7.0mm(min.)
8.0mm(min.)
Insulation thickness:
0.5mm(min.)
0.5mm(min.)
Pin Configuration (top view)
Unit in mm
TOSHIBA
11‚ąí7B1
Weight: 0.35 g




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