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TMS4C2972-26DT Datasheet(PDF) 10 Page - Texas Instruments

Part # TMS4C2972-26DT
Description  245760 BY 12-BIT FIELD MEMORY
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Manufacturer  TI [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI - Texas Instruments

TMS4C2972-26DT Datasheet(HTML) 10 Page - Texas Instruments

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TMS4C2972
245760 BY 12-BIT
FIELD MEMORY
SMGS671 – OCTOBER 1997
10
POST OFFICE BOX 1443
HOUSTON, TEXAS 77251–1443
reset read (RSTR) (continued)
On the first four positive SRCK transitions after RSTR has gone high, the data states of OE and RE are checked
to determine whether the read pointer is to be set to the beginning of any one of its 6 144 blocks or if the pointer
is to be set to 0 (see Figure 2). To set the read pointer to an address other than 0, the following four conditions
all have to be met:
1.
On first positive SRCK transition:
OE must be low
and
RE must be high.
2.
On second positive SRCK transition:
OE must be low
and
RE must be high.
3.
On third positive SRCK transition:
OE must be high
and
RE must be low.
4.
On fourth positive SRCK transition:
OE must be high
and
RE must be low.
If any one of these conditions is not met, the memory operates exactly like a TMS4C2970 until the next positive
RSTR transition.
On the first and second positive SRCK transitions, the memory operates exactly like a TMS4C2970, regarding
its response to the control signals OE and RE. Once all the above conditions are met, the outputs will remain
disabled regardless of the state of OE.
If all four check conditions above have been met, OE no longer controls the state of the outputs and it can be
used to set the read pointer to a new block address. This is done by clocking in the data states of the OE pin
during the next 13 positive SRCK transitions. The MSB of this address is clocked in on the 5th positive SRCK
transition, the LSB on the 17th transition. Only block values between 0 and 6143 are recognized. The user must
avoid clocking in a value above 6143 because this may result in improper device operation or lock-up. Recovery
from this lock-up will require a TMS4C2970-like reset operation to be performed.
After a block address has been clocked in, RE and OE must be kept low for at least another 55 SRCK clock
cycles to satisfy the read latency requirements of the memory. After that, sequential addressing may start at
the beginning of the new block by bringing RE and OE high.
During the entire control sequence to change the read pointer, only one positive RSTR transition is allowed.
After RSTR has been kept high during the first positive SRCK transition, it can be maintained high or brought
low as desired. But once RSTR has gone low, it cannot be brought high again until the read latency is satisfied.
Bringing RSTR high earlier may cause improper operation of the device.
RSTR can be kept high for many cycles, the essential actions detailed above are initiated by the first or the
second SRCK cycle, if reset to zero is desired, or during the following 70 SRCK cycles. After RSTR is brought
low, it must remain low for at least two active SRCK cycles (that is, while RE is high) , before another reset read
operation can take place.
data outputs (Q0 – Q11) and serial-read clock (SRCK)
Data outputs are determined by the state of RE and OE at the rising edge of SRCK. If the outputs change state
because the read pointer was advanced, they remain in the previous state for at least the output hold time
interval th(OUT) and assume the new valid state after the access time interval tAC. See the timing diagrams for
details.
The three-state output buffer provides direct TTL compatibility and no pull-up resistors are required. Data output
has the same polarity as data input.
read enable (RE)
RE is used to enable or disable incrementing the internal read address pointer. When the RE input is at logic
high, rising edges of the SRCK will increment the pointer. When the RE input is at logic low, the pointer will not
be incremented. RE setup and hold times are referenced to the rising edge of SRCK.


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