Si8483DB

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Vishay Siliconix

S15-0932-Rev. C, 20-Apr-15

4

Document Number: 63553

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Source-Drain Diode Forward Voltage

Threshold Voltage

On-Resistance vs. Gate-to-Source Voltage

Single Pulse Power, Junction-to-Ambient

Safe Operating Area, Junction-to-Ambient

0.1

1

10

100

0.0

0.2

0.4

0.6

0.8

1.0

1.2

V

T

T

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

- 50

- 25

0

25

50

75

100

125

150

T

I

0

0.02

0.04

0.06

0.08

0.10

0.12

0.14

012345

V

T

T

I

0

5

10

15

20

25

30

Pulse (s)

10

1000

0.1

0.01

0.001

100

1

0.01

0.1

1

10

100

0.1

1

10

100

V

* V

100 μs

100 ms

Limited by R

1 ms

T

BVDSS Limited

10 ms

1 s, 10 s

DC