SIA817EDJ datasheet(3/11 Pages) VISHAY

Part #	SIA817EDJ

Description	P-Channel 30 V (D-S) MOSFET with Schottky Diode

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Manufacturer	VISHAY [Vishay Siliconix]

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Vishay Siliconix

SiA817EDJ

New Product

Document Number: 62820

S13-0196-Rev. A, 28-Jan-13

www.vishay.com

3

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

For technical questions, contact: pmostechsupport@vishay.com

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

MOSFET TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)

SCHOTTKY SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Forward Voltage Drop

VF

IF = 0.5 A

0.37

0.45

V

IF = 0.5 A, TJ = 125 °C

0.31

0.37

IF = 1 A

0.46

0.56

IF = 1 A, TJ = 125 °C

0.41

0.50

Maximum Reverse Leakage Current

Irm

Vr = 30 V

0.025

0.100

mA

Vr = 30 V, TJ = 85 °C

0.6

6

Junction Capacitance

CT

Vr = 15 V

35

pF

Gate-Source Voltage vs. Gate Current

Output Characteristics

0.00

0.40

0.80

1.20

1.60

0

3

6

9

12

15

18

V

GS - Gate-Source Voltage (V)

T

J = 25 °C

0

3

6

9

12

15

0.0

0.5

1.0

1.5

2.0

2.5

3.0

V

DS - Drain-to-Source Voltage (V)

V

GS = 3 V

V

GS = 10 V thru 4 V

V

GS = 2 V

Gate-Source Voltage vs. Gate Current

Transfer Characteristics

10

-2

10

-3

10

-4

10

-5

10

-6

10

-7

10

-8

10

-9

0

3

6

9

12

15

18

V

GS - Gate-to-Source Voltage (V)

T

J = 150 °C

T

J = 25 °C

0

1

2

3

4

5

0.0

0.5

1.0

1.5

2.0

V

GS - Gate-to-Source Voltage (V)

T

C = 25 °C

T

C = 125 °C

T

C = - 55 °C

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