SIR476DP datasheet(3/13 Pages) VISHAY

Part #	SIR476DP

Description	N-Channel 25-V (D-S) MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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Document Number: 68764

S-81715-Rev. A, 04-Aug-08

www.vishay.com

3

Vishay Siliconix

SiR476DP

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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Output Characteristics

On-Resistance vs. Drain Current and Gate Voltage

Gate Charge

0

16

32

48

64

80

0.0

0.5

1.0

1.5

2.0

2.5

VDS - Drain-to-Source Voltage (V)

VGS =10thru 4 V

VGS =3 V

0.0010

0.0012

0.0014

0.0016

0.0018

0.0020

0

163248

64

80

ID - Drain Current (A)

VGS =10 V

VGS =4.5 V

0

2

4

6

8

10

020

40

60

80

100

Qg - Total Gate Charge (nC)

ID =20A

VDS =15 V

VDS =10 V

VDS =5 V

Transfer Characteristics

Capacitance

On-Resistance vs. Junction Temperature

0

2

4

6

8

10

01

2

3

45

VGS - Gate-to-Source Voltage (V)

TC = 25 °C

TC = 125 °C

TC = - 55 °C

Crss

0

1520

3040

4560

6080

7600

0

5

10

15

20

25

Ciss

VDS - Drain-to-Source Voltage (V)

Coss

0.7

0.9

1.1

1.3

1.5

1.7

- 50

- 25

0

25

50

75

100

125

150

TJ -Junction Temperature (°C)

VGS =4.5 V

ID =20A

VGS =10 V

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