SIS427EDN datasheet(3/13 Pages) VISHAY

Part #	SIS427EDN

Description	P-Channel 30-V (D-S) MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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Vishay Siliconix

SiS427EDN

Document Number: 62856

S13-1164-Rev. A, 13-May-13

www.vishay.com

3

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

For technical questions, contact: pmostechsupport@vishay.com

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Gate Source Voltage vs. Gate Current

Output Characteristics

On-Resistance vs. Drain Current

0.000

0.010

0.020

0.030

0.040

0.050

0

6

12

18

24

30

V

GS - Gate-Source Voltage (V)

T

J = 25 °C

0

10

20

30

40

50

0

1

2

3

4

5

V

DS - Drain-to-Source Voltage (V)

V

GS = 4 V

V

GS = 10 V thru 4.5 V

V

GS = 3 V

0

0.006

0.012

0.018

0.024

0.03

0

15

30

45

60

I

D - Drain Current (A)

V

GS = 4.5 V

V

GS = 6 V

V

GS = 10 V

Gate Source Voltage vs. Gate Current

Transfer Characteristics

Capacitance

10

-3

10

-4

10

-5

10

-6

10

-7

10

-8

0

11

22

33

44

V

GS - Gate-to-Source Voltage (V)

T

J = 150 °C

T

J = 25 °C

0

1

2

3

4

5

0

0.6

1.2

1.8

2.4

3

V

GS - Gate-to-Source Voltage (V)

T

C = 25 °C

T

C = 125 °C

T

C = - 55 °C

0

600

1200

1800

2400

3000

0

6

12

18

24

30

V

DS - Drain-to-Source Voltage (V)

C

iss

C

oss

C

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