IRF644S, SiHF644S

www.vishay.com

Vishay Siliconix

S16-0754-Rev. D, 02-May-16

1

Document Number: 91040

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Power MOSFET

FEATURES

• Surface mount

• Available in tape and reel

• Dynamic dV/dt rating

• Repetitive avalanche rated

• Fast switching

• Ease of paralleling

• Simple drive requirements

• Material

categorization:

for

definitions

of

Note



RoHS-compliant and / or parts that are non-RoHS-compliant. For



example, parts with lead (Pb) terminations are not RoHS-compliant.



Please see the information / tables in this datasheet for details.

DESCRIPTION

Third generation power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized

device

design,

low

on-resistance

and

cost-effectiveness.



accommodating die size up to HEX-4. It provides the

highest

power

capability

and

the

lowest

possible

on-resistance in any existing surface mount package. The

its low internal connection resistance and can dissipate up

to 2.0 W in a typical surface mount application.

Note

a. See device orientation.

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

d. 1.6 mm from case.

e. When mounted on 1" square PCB (FR-4 or G-10 material).

PRODUCT SUMMARY

250

0.28

68

11

35

Configuration

Single

N-Channel MOSFET

G

D

S

G D

S

Available

Available

ORDERING INFORMATION

Package

Lead (Pb)-free and Halogen-free

SiHF644S-GE3

Lead (Pb)-free

IRF644SPbF

SiHF644S-E3

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

250

V

Gate-Source Voltage

± 20

Continuous Drain Current

14

A

8.5

56

Linear Derating Factor

1.0

W/°C

0.025

550

mJ

14

A

13

mJ

Maximum Power Dissipation

125

W

3.1

dV/dt

4.8

V/ns

Operating Junction and Storage Temperature Range

-55 to +150

°C

for 10 s

300