SI3474DV datasheet(5/11 Pages) VISHAY

Part #	SI3474DV

Description	N-Channel 100 V (D-S) MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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Document Number: 62875

S13-1664-Rev. A, 29-Jul-13

www.vishay.com

5

Vishay Siliconix

Si3474DV

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

For technical questions, contact: pmostechsupport@vishay.com

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

* The power dissipation PD is based on TJ(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper

dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package

limit.

Current Derating*

0

1.05

2.1

3.15

4.2

0

25

50

75

100

125

150

T

C - Case Temperature (°C)

Power, Junction-to-Foot

0

1.1

2.2

3.3

4.4

0

25

50

75

100

125

150

T

C - Case Temperature (°C)

Power, Junction-to-Ambient

0

0.35

0.7

1.05

1.4

0

25

50

75

100

125

150

T

A - Ambient Temperature (°C)

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