SI4178DY-T1-E3 datasheet(4/9 Pages) VISHAY

Part #	SI4178DY-T1-E3

Description	N-Channel 30 V (D-S) MOSFET

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Document Number: 67906

S11-0653-Rev. A, 11-Apr-11

Vishay Siliconix

Si4178DY-T1-E3

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Source-Drain Diode Forward Voltage

Threshold Voltage

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

10

1

100

TJ = 25 °C

TJ = 150 °C

VSD - Source-to-Drain Voltage (V)

1.6

1.8

2.0

2.2

2.4

2.6

2.8

3.0

- 50

- 25

0

25

50

75

100

125

150

ID = 250 μA

TJ - Temperature (°C)

On-Resistance vs. Gate-to-Source Voltage

Single Pulse Power

0.010

0.015

0.020

0.025

0.030

0.035

0.040

0.045

0.050

0

2

468

10

ID = 8.4 A; TJ = 25 °C

ID =2A;TJ = 25 °C

ID =2 A; TJ = 125 °C

ID = 8.4 A; TJ = 125 °C

VGS - Gate-to-Source Voltage (V)

0

5

10

15

20

25

30

Time (s)

10

1000

0.1

0.01

0.001

100

1

Safe Operating Area, Junction-to-Ambient

100

1

0.1

1

10

100

0.01

10

0.1

TA =25 °C

Single Pulse

100 ms

Limited by RDS(on)*

BVDSS Limited

1ms

100 μs

10 ms

1s

10 s

DC

VDS - Drain-to-Source Voltage (V)

*V GS > minimum VGS at which RDS(on) is specified

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