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SI4413ADY Datasheet(PDF) 3 Page - Vishay Siliconix |
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SI4413ADY Datasheet(HTML) 3 Page - Vishay Siliconix |
3 / 8 page Document Number: 73792 S-83096-Rev. C, 29-Dec-08 www.vishay.com 3 Vishay Siliconix Si4413ADY TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted On-Resistance vs. Drain Current Source-Drain Diode Forward Voltage On-Resistance vs. Junction Temperature 0 10 20 30 40 50 ID - Drain Current (A) VGS = 10 V VGS = 4.5 V 0.004 0.006 0.008 0.010 0.012 0.014 0 2 4 6 8 10 0 224466 88 110 VDS = 15 V ID = 13 A Qg - Total Gate Charge (nC) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 TJ = 25 °C 100 10 0.1 VSD - Source-to-Drain Voltage (V) TJ = 150 °C 1 Gate Charge Capacitance On-Resistance vs. Gate-to-Source Voltage 0 1400 2800 4200 5600 7000 0 6 12 18 24 30 VDS - Drain-to-Source Voltage (V) Crss Coss Ciss 0.6 0.8 1.0 1.2 1.4 1.6 - 50 - 25 0 25 50 75 100 125 150 VGS = 10 V ID = 13 A TJ - Junction Temperature (°C) 02 4 6 8 10 GS - Gate-to-Source Voltage (V) 0.000 0.005 0.010 0.015 0.020 0.025 V |
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