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SI7104DN Datasheet(PDF) 2 Page - Vishay Siliconix |
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SI7104DN Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 14 page www.vishay.com 2 Document Number: 73406 S-80581-Rev. B, 17-Mar-08 Vishay Siliconix Si7104DN Notes: a. Surface Mounted on 1" x 1" FR4 board. b. Maximum under Steady State conditions is 81 °C/W. THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambienta, b t ≤ 10 s RthJA 24 33 °C/W Maximum Junction-to-Case (Drain) Steady State RthJC 1.9 2.4 SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 12 V VDS Temperature Coefficient ΔV DS/TJ ID = 250 µA 8 mV/°C VGS(th) Temperature Coefficient ΔV GS(th)/TJ - 4.5 Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 0.6 1.8 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 12 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 12 V, VGS = 0 V 1 µA VDS = 12 V, VGS = 0 V, TJ = 55 °C 10 On-State Drain Currenta ID(on) VDS ≥ 5 V, VGS = 4.5 V 40 A Drain-Source On-State Resistancea RDS(on) VGS = 4.5 V, ID = 26.1 A 0.0031 0.0037 Ω VGS = 2.5 V, ID = 19 A 0.0057 0.007 Forward Transconductancea gfs VDS = 15 V, ID = 26.1 A 90 S Dynamicb Input Capacitance Ciss VDS = 6 V, VGS = 0 V, f = 1 MHz 2800 pF Output Capacitance Coss 1050 Reverse Transfer Capacitance Crss 520 Total Gate Charge Qg VDS = 6 V, VGS = 10 V, ID = 26.1 A 46 70 nC VDS = 6 V, VGS = 4.5 V, ID = 26.1 A 23 35 Gate-Source Charge Qgs 5.3 Gate-Drain Charge Qgd 5.1 Gate Resistance Rg f = 1 MHz 0.6 1.2 1.8 Ω Turn-On Delay Time td(on) VDD = 6 V, RL = 0.6 Ω ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω 20 30 ns Rise Time tr 20 30 Turn-Off Delay Time td(off) 33 50 Fall Time tf 10 15 Turn-On Delay Time td(on) VDD = 6 V, RL = 0.6 Ω ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω 12 20 Rise Time tr 11 20 Turn-Off Delay Time td(off) 36 55 Fall Time tf 10 15 |
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