Datasheet

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Fast recovery diodes

RF1001T2D

Applications

Dimensions (Unit : mm)

Structure

General rectification

Features

1) Cathode common type.

(TO-220)

3) Very fast recovery

4) Low switching loss

Construction

Silicon epitaxial planar

Absolute maximum ratings (Ta=25

C)

Symbol

Unit

V

V

Io

A

A

Tj

C

Tstg

C

Electrical characteristic (Ta=25

C)

Symbol

Min.

Typ.

Max.

Unit

-

0.87

0.93

V

Reverse current

-0.01

10

μA

Reverse recovery time

trr

-

15

30

ns

Thermal impedance

Rth(j-c)

--

2.5

C/W

JUNCTION TO CASE

Forward voltage

Parameter

Limits

Reverse voltage (repetitive peak)

200

Reverse voltage (DC)

200

Average rectified forward current (*1)

10

Forward current surge peak (60Hz/1cyc)

Conditions

(*1)Business frequencies, Rating of R-load, Tc=126

C. 1/2 Io per diode

Parameter

80

Junction temperature

150

Storage temoerature

55 to 150

(1) (2) (3)

ROHM : TO220FN

Manufacture Date

1.2

1.3

0.8

(1) (2) (3)

10.0

±0.3

0.1

2.8

±0.2

0.1

4.5

±0.3

0.1

0.7

±0.1

0.05

2.6

±0.5

1/4

2012.12 - Rev.E