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SI7758DP Datasheet(PDF) 4 Page - Vishay Siliconix |
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SI7758DP Datasheet(HTML) 4 Page - Vishay Siliconix |
4 / 13 page Vishay Siliconix Si7758DP www.vishay.com 4 Document Number: 68696 S-81326-Rev. A, 09-Jun-08 New Product TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Source-Drain Diode Forward Voltage Reverse Current (Schottky) 0.1 1 10 100 0.0 0.2 0.4 0.6 0.8 1.0 TJ = 150 °C VSD -Source-to-Drain Voltage (V) TJ = 25 °C 0 25 50 75 100 125 150 TJ - Temperature (°C) 10 V 30 V 20 V 10-3 10-5 10-6 10-4 10-2 10-1 On-Resistance vs. Gate-to-Source Voltage Single Pulse Power, Junction-to-Ambient 0.000 0.002 0.004 0.006 0.008 0.010 012 3 45 67 8 910 VGS - Gate-to-Source Voltage (V) TJ =25 °C TJ = 125 °C ID =20A 0 40 80 120 160 200 0 1 1 1 0 0 . 00.01 Time (s) 0.1 Safe Operating Area, Junction-to-Ambient 0.01 100 1 100 0.01 0.1 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified 1ms 10 ms 100 ms 0.1 1 10 10 TA = 25 °C Single Pulse Limited byRDS(on)* 1s DC 10 s BVDSS Limited |
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