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2N3743 Datasheet(PDF) 2 Page - Microsemi Corporation

Part # 2N3743
Description  PNP HIGH VOLTAGE SILICON TRANSISTOR
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Manufacturer  MICROSEMI [Microsemi Corporation]
Direct Link  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

2N3743 Datasheet(HTML) 2 Page - Microsemi Corporation

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2N3743, 2N4930, 2N4931, JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
Symbol
Min.
Max.
Unit
Emitter-Base Cutoff Current
VEB = 4.0 Vdc
IEBO
150
ηAdc
ON CHARACTERISTICS
(3)
Forward-Current Transfer Ratio
IC = 0.1 mAdc, VCE = 10 Vdc
IC = 1.0 mAdc, VCE = 10 Vdc
IC = 10 mAdc, VCE = 10 Vdc
IC = 30 mAdc, VCE = 10 Vdc
IC = 50 mAdc, VCE = 20 Vdc
hFE
30
40
40
50
30
200
Collector-Emitter Saturation Voltage
IC = 30 mAdc, IB = 3.0 mAdc
IC = 10 mAdc, IB = 1.0 mAdc
VCE(sat)
1.2
1.0
Vdc
Base-Emitter Saturation Voltage
IC = 10 mAdc, IB = 1.0 mAdc
IC = 30 mAdc, IB = 3.0 mAdc
VBE(sat)
1.0
1.2
Vdc
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small-Signal Short-Circuit
Forward Current Transfer Ratio
IC = 10 mAdc, VCE = 20 Vdc, f = 20 MHz
h
fe
2.0
8.0
Small-Signal Short-Circuit Forward Current Transfer Ratio
IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz
hfe
30
300
Output Capacitance
VCB = 20 Vdc, IE = 0, f ≥ 0.1 MHz
Cobo
15
pF
Input Capacitance
VEB = 1.0 Vdc, IC = 0, f ≥ 0.1 MHz
Cibo
400
pF
SAFE OPERATING AREA
DC Tests
TC = +25
0C, 1 Cycle, t
≥ 1.0 s
Test 1
VCE = 20 Vdc, IC = 50 mAdc
All Types
Test 2
VCE = 100 Vdc, IC = 10 mAdc
All Types
Test 3
VCE = 300 Vdc, IC = 3.3 mAdc
2N3743
VCE = 200 Vdc, IC = 5.0 mAdc
2N4930
VCE = 250 Vdc, IC = 4.0 mAdc
2N4931
(3) Pulse Test: Pulse Width = 300
µs, Duty Cycle ≤ 2.0%.
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2


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