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JAN2N5662 Datasheet(PDF) 1 Page - Microsemi Corporation |
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JAN2N5662 Datasheet(HTML) 1 Page - Microsemi Corporation |
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1 / 2 page  TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/454 Devices Qualified Level 2N5660 2N5661 2N5662 2N5663 JAN, JANTX JANTXV MAXIMUM RATINGS Ratings Symbol 2N5660 2N5662 2N5661 2N5663 Unit Collector-Emitter Voltage VCEO 200 300 Vdc Collector-Base Voltage VCBO 250 400 Vdc Collector-Emitter Voltage VCER 250 400 Vdc Emitter-Base Voltage VEBO 6.0 Vdc Base Current IB 0.5 Adc Collector Current IC 2.0 Adc 2N5660 2N5661 2N5662 2N5663 Total Power Dissipation @ TA = +25 0C @ TC = +100 0C PT 2.0 (1) 20 (3) 1.0 (2) 15 (4) W W Operating & Storage Junction Temperature Range TJ, Tstg -65 to +200 0C THERMAL CHARACTERISTICS Characteristics Symbol 2N5660 2N5661 2N5662 2N5663 Unit Thermal Resistance, Junction-to-Case Junction-to-Ambient RθJC RθJA 5.0 87.5 6.67 145.8 0C/W 1) Derate linearly 11.4 mW/ 0C for TA >+ 250C 2) Derate linearly 5.7 mW/ 0C for TA > +250C 3) Derate linearly 200 mW/ 0C for TC > +1000C 4) Derate linearly 150 mW/ 0C for TC > +1000C *See appendix A for package outline ELECTRICAL CHARACTERISTICS (TC = 25 0C unless otherwise noted) Characteristics Symbol Min. Max. Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 10 mAdc 2N5660, 2N5662 2N5661, 2N5663 V(BR)CEO 200 300 Vdc Collector-Base Breakdown Voltage IC = 10 mAdc, RBE = 100Ω 2N5660, 2N5662 2N5661, 2N5663 V(BR)CER 250 400 Vdc Emitter-Base Breakdown Voltage IE = 10 µAdc V(BR)EBO 6.0 Vdc 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 120101 Page 1 of 2 TO-66* (TO-213AA) 2N5660, 2N5661 TO-5* 2N5662, 2N5663 |
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