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2SC5632 Datasheet(PDF) 1 Page - Panasonic Semiconductor |
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2SC5632 Datasheet(HTML) 1 Page - Panasonic Semiconductor |
1 / 2 page Transistors 1 Publication date: February 2003 SJC00186BED 2SC5632 Silicon NPN epitaxial planar type For high-frequency amplification and switching ■ Features • High transition frequency f T • S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing ■ Absolute Maximum Ratings T a = 25°C Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) VCBO IC = 100 µA, I E = 015 V Emitter-base cutoff current (Collector open) IEBO VEB = 2 V, IC = 02 µA Forward current transfer ratio hFE VCE = 4 V, IC = 2 mA 100 350 hFE ratio * ∆h FE hFE2: VCE = 4 V, I C = 100 µA 0.6 1.5 hFE1: VCE = 4 V, IC = 2 mA Collector-emitter saturation voltage VCE(sat) IC = 20 mA, IB = 4 mA 0.1 V Transition frequency fT VCE = 5 V, I C = 15 mA, f = 200 MHz 0.6 1.1 GHz Collector output capacitance Cob VCB = 10 V, I E = 0, f = 1 MHz 1.0 1.6 pF (Common base, input open circuited) ■ Electrical Characteristics T a = 25°C ± 3°C Unit: mm Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 15 V Collector-emitter voltage (Base open) VCEO 8V Emitter-base voltage (Collector open) VEBO 3V Collector current IC 50 mA Collector power dissipation PC 150 mW Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C Marking Symbol: 2R 1.3±0.1 0.3 +0.1 –0.0 2.0±0.2 1 3 2 (0.65) (0.65) 0.15 +0.10 –0.05 10˚ 1: Base 2: Emitter 3: Collector EIAJ: SC-70 SMini3-G1 Package Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: ∆h FE = hFE2 / hFE1 |
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