SI7718DN datasheet(4/7 Pages) VISHAY

Part #	SI7718DN

Description	N-Channel 30-V (D-S) MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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Document Number: 68698

S-81584-Rev. A, 07-Jul-08

Vishay Siliconix

Si7718DN

New Product

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Source-Drain Diode Forward Voltage

Threshold Voltage

0.0

0.2

0.4

0.6

0.8

1.0

1.2

VSD -Source-to-Drain Voltage (V)

1

0.01

0.001

0.1

10

100

TJ = 150 °C

TJ = 25 °C

- 0.8

- 0.6

- 0.4

- 0.2

0

0.2

0.4

- 50

- 25

0

25

50

75

100

125

150

ID = 250 µA

TJ - Temperature (°C)

ID =5mA

On-Resistance vs. Gate-to-Source Voltage

Single Pulse Power, Junction-to-Ambient

0.000

0.006

0.012

0.018

0.024

0.030

012

3

45

67

8

910

VGS - Gate-to-Source Voltage (V)

TJ =25 °C

TJ = 125 °C

0

20

40

60

80

100

0.001

0.01

0.1

1

10

100

Time (s)

Safe Operating Area, Junction-to-Ambient

0.01

100

1

100

0.01

0.1

VDS - Drain-to-Source Voltage (V)

* VGS > minimum VGS at which RDS(on) is specified

1ms

10 ms

100 ms

0.1

1

10

TA = 25 °C

Single Pulse

Limited byRDS(on)*

DC

10 s

BVDSS

Limited

1s

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