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2SC4617 Datasheet(PDF) 2 Page - Galaxy Semi-Conductor Holdings Limited |
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2SC4617 Datasheet(HTML) 2 Page - Galaxy Semi-Conductor Holdings Limited |
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2 / 4 page  Production specification NPN general purpose Transistor 2SC4617 H006 www.gmicroelec.com Rev.A 2 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=50μA,IE=0 50 V Collector-emitter breakdown voltage V(BR)CEO IC=1.0mA,IB=0 50 V Emitter-base breakdown voltage V(BR)EBO IE=50μA,IC=0 5 V Collector cut-off current ICBO VCB=30V,IE=0 0.5 μA Emitter cut-off current IEBO VEB=4V,IC=0 0.5 μA DC current gain hFE VCE=6V,IC=1mA 120 560 Collector-emitter saturation voltage VCE(sat) IC=60mA, IB=5.0mA 0.4 V Transition frequency fT VCE=12V, IC=2.0mA,f=30MHz 180 MHz Collector output capacitance Cob VCB=12V, IC=0,f=1MHz 2.0 Pf CLASSIFICATION OF HFE RANK Q R S RANGE 120-270 180-390 270-560 MARKING BQ BR BS |
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