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AN804 Datasheet(PDF) 3 Page - Vishay Siliconix |
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AN804 Datasheet(HTML) 3 Page - Vishay Siliconix |
3 / 4 page AN804 Vishay Siliconix Document Number: 70611 10-Mar-97 www.vishay.com S FaxBack 408-970-5600 3 Half-Bridge (Totem Pole) A high-side p-channel MOSFET and a low-side n-channel MOSFET tied with common drains (Figure 5) make a superb high-current “CMOS equivalent” switch. One fault common to such circuits has been the excessive crossover current during switching that may occur if the gate drive allows both MOSFETs to be on simultaneously. N-Channel P-Channel –15 V +15 V –15 V +15 V VOUT +VDD –VDD IDD FIGURE 5. Low-Voltage Complementary MOSPOWER Array Properly driving the MOSFET gates can minimize unwanted crossover current at high supply voltages (both +VDD and –VDD) (Figure 6). A resistively-coupled lower-power complementary pair offers extremely low crossover current when the output stage uses high-power MOSFETs. The Zener, Z1, and resistors, R1 and R3, act as a level shifter, properly driving the low-power MOSFETs. The Zener may be selected according to the equation VZENER = 2 VDD – Vth where +VDD = –VDD Whatever crossover current that might occur in the low-power drivers is dramatically reduced by the series resistor, R4. Additionally, driving the high-power complementary pair using this resistor divider scheme all but eliminates crossover current in this critical output driver. This increases both the driver’s efficiency and its reliability. TABLE 1. N AND PCHANNEL DUAL MOSFETS IN SO8 PACKAGE FOR OUTPUT STAGE Part Number V(BR)DSS (V) rDS Max (W) ID (A) Si9939DY 30/–30 0.05/0.1 3.5/–3.5 Si9942DY 20/–20 0.125/0.2 3/–2.5 Si9928DY 20/–20 0.05/0.11 5/–3.4 N-Channel P-Channel N-Channel R4 Z1 R3 R1 R2 TTL +VDD –VDD FIGURE 6. High-Voltage Complementary Pair Driven by Logic-Compatible MOSFET |
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