SI4621DY datasheet(3/10 Pages) VISHAY

Part #	SI4621DY

Description	P-Channel 20-V (D-S) MOSFET with Schottky Diode

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Manufacturer	VISHAY [Vishay Siliconix]

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Document Number: 73855

S11-1648-Rev. D, 15-Aug-11

www.vishay.com

3

Vishay Siliconix

Si4621DY

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Notes:

a. Pulse test; pulse width

 300 µs, duty cycle  2 %.

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

IS

TC = 25 °C

- 6.2

A

Pulse Diode Forward Current

ISM

- 25

Body Diode Voltage

VSD

IS = - 1.7 A, VGS = 0 V

- 0.8

- 1.2

V

Body Diode Reverse Recovery Time

trr

IF = - 1.7 A, dI/dt = 100 A/µs, TJ = 25

°C

21

40

ns

Body Diode Reverse Recovery Charge

Qrr

10

20

nC

Reverse Recovery Fall Time

ta

7

ns

Reverse Recovery Rise Time

tb

16

SCHOTTKY SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Forward Voltage Drop

VF

IF = 1 A

0.41

0.45

V

IF = 1 A, TJ = 125 °C

0.36

0.41

Maximum Reverse Leakage Current

Irm

Vr = 20 V

0.02

0.20

mA

Vr = 20 V, TJ = 85 °C

0.7

7

Vr = 20 V, TJ = 125 °C

550

Junction Capacitance

CT

Vr = 10 V

60

pF

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