Vishay Siliconix

Si7682DP

Document Number: 73350

S09-0272-Rev. B, 16-Feb-09

www.vishay.com

1

N-Channel 30-V (D-S) MOSFET

FEATURES

•

Halogen-free According to IEC 61249-2-21

Available

•

•

APPLICATIONS

•

High-Side DC/DC Conversion

- Notebook

- Server

PRODUCT SUMMARY

a

30

20

11 nC

20

Ordering Information: Si7682DP-T1-E3 (Lead (Pb)-free)

Si7682DP-T1-GE3 (Lead (Pb)-free and Halogen-free)

1

2

3

4

5

6

7

8

S

S

S

G

D

D

D

D

6.15 mm

5.15 mm

PowerPAK SO-8

Bottom View

N-Channel MOSFET

G

D

S

Notes:

b. Surface Mounted on 1" x 1" FR4 board.

c. t = 10 s.

d. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed

copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and

is not required to ensure adequate bottom side solder interconnection.

e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.

f. Maximum under Steady State conditions is 70 °C/W.

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

30

V

Gate-Source Voltage

± 20

20

A

15.5

Pulsed Drain Current

50

Continuous Source-Drain Diode Current

20

Maximum Power Dissipation

27.5

W

17.5

Operating Junction and Storage Temperature Range

- 55 to 150

°C

260

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

t

≤ 10 s

20

25

°C/W

Maximum Junction-to-Case (Drain)

Steady State

3.5

4.5