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BGM1011 Datasheet(PDF) 6 Page - NXP Semiconductors

Part # BGM1011
Description  MMIC wideband amplifier
Download  11 Pages
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BGM1011 Datasheet(HTML) 6 Page - NXP Semiconductors

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2002 Jan 14
6
Philips Semiconductors
Preliminary specification
MMIC wideband amplifier
BGM1011
-50
-40
-30
-20
-10
0
0
1000
2000
3000
f (MHz)
|s12|
2
(dB)
Fig.5
Isolation (|s12|2) as a function of frequency;
typical values.
IS =25.5 mA; VS = 5.0 V; PD =
−35 dBm; ZO =50 Ω.
20
25
30
35
40
0
1000
2000
3000
f (MHz)
|s21|
2
(dB)
(1)
(2)
(3)
Fig.6
Insertion gain (|s21|2) as a function of
frequency; typical values.
PD =
−35 dBm; ZO =50 Ω.
(1) IS = 19.5 mA; VS=4.5 V
(2) IS = 25.5 mA; VS=5.0 V
(3) IS = 29.8 mA; VS=5.5 V
0
5
10
15
20
-30
-25
-20
-15
-10
-5
0
P
D (dBm)
P
L
(dBm)
(1)
(3)
(2)
Fig.7
Load power as a function of drive power at
1 GHz; typical values.
f = 1 GHz; ZO =50
Ω.
(1) VS=4.5 V
(2) VS=5.0 V
(3) VS=5.5 V
-5
0
5
10
15
-40
-35
-30
-25
-20
-15
-10
-5
0
P
D (dBm)
P
L
(dBm)
(1)
(2)
(3)
Fig.8
Load power as a function of drive power at
2.2 GHz; typical values.
f=2.2 GHz; ZO =50
Ω.
(1) VS=4.5 V
(2) VS=5.0 V
(3) VS=5.5 V


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