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BGM1011 Datasheet(PDF) 6 Page - NXP Semiconductors |
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BGM1011 Datasheet(HTML) 6 Page - NXP Semiconductors |
6 / 11 page 2002 Jan 14 6 Philips Semiconductors Preliminary specification MMIC wideband amplifier BGM1011 -50 -40 -30 -20 -10 0 0 1000 2000 3000 f (MHz) |s12| 2 (dB) Fig.5 Isolation (|s12|2) as a function of frequency; typical values. IS =25.5 mA; VS = 5.0 V; PD = −35 dBm; ZO =50 Ω. 20 25 30 35 40 0 1000 2000 3000 f (MHz) |s21| 2 (dB) (1) (2) (3) Fig.6 Insertion gain (|s21|2) as a function of frequency; typical values. PD = −35 dBm; ZO =50 Ω. (1) IS = 19.5 mA; VS=4.5 V (2) IS = 25.5 mA; VS=5.0 V (3) IS = 29.8 mA; VS=5.5 V 0 5 10 15 20 -30 -25 -20 -15 -10 -5 0 P D (dBm) P L (dBm) (1) (3) (2) Fig.7 Load power as a function of drive power at 1 GHz; typical values. f = 1 GHz; ZO =50 Ω. (1) VS=4.5 V (2) VS=5.0 V (3) VS=5.5 V -5 0 5 10 15 -40 -35 -30 -25 -20 -15 -10 -5 0 P D (dBm) P L (dBm) (1) (2) (3) Fig.8 Load power as a function of drive power at 2.2 GHz; typical values. f=2.2 GHz; ZO =50 Ω. (1) VS=4.5 V (2) VS=5.0 V (3) VS=5.5 V |
Similar Part No. - BGM1011 |
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Similar Description - BGM1011 |
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