HFU2N65F_16 datasheet(3/8 Pages) SEMIHOW

Part #	HFU2N65F

Description	650V N-Channel MOSFET

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Typical Characteristics

Figure 1. On Region Characteristics

Figure 2. Transfer Characteristics

Figure 3. On Resistance Variation vs

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation with Source Current

and Temperature

Figure 5. Capacitance Characteristics

Figure 6. Gate Charge Characteristics

01234567

0

2

4

6

8

10

12

Q

G, Total Gate Charge [nC]

* Note : I

D = 2.0A

V

DS = 325V

V

DS = 130V

V

DS = 520V

10

-1

10

0

10

1

0

100

200

300

400

500

C

iss = Cgs + Cgd (Cds = shorted)

C

oss = Cds + Cgd

C

rss = Cgd

* Note ;

1. V

GS = 0 V

2. f = 1 MHz

C

rss

C

oss

C

iss

V

DS, Drain-Source Voltage [V]

23

45

67

89

10

0.1

1

-25

oC

25

oC

* Notes :

1. V

DS= 30V

2. 300us Pulse Test

V

GS, Gate-Source Voltage [V]

150

oC

0.20.4

0.60.8

1.01.2

1.41.6

1.8

0.1

1

25

oC

* Notes :

1. V

GS= 0V

2. 300us Pulse Test

V

SD, Source-Drain Voltage [V]

150

oC

10

0

10

1

10

-1

10

0

10

1

V

GS

Top :

15.0 V

10.0 V

8.0 V

7.0 V

6.5 V

6.0 V

5.5 V

Bottom : 5.0 V

* Notes :

1. 300us Pulse Test

2. T

C = 25

oC

V

DS, Drain-Source Voltage [V]

012

345

0

3

6

9

12

I

D, Drain Current[A]

V

GS = 10V

V

GS = 20V

* Note : T

J = 25

oC

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