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RFUH20NS3SFH Datasheet(PDF) 1 Page - Rohm |
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RFUH20NS3SFH Datasheet(HTML) 1 Page - Rohm |
1 / 8 page Data Sheet Super Fast Recovery Diode RFUH20NS3SFH z Serise z Dimensions(Unit : mm) z Land Size Figure(Unit : mm) Super Fast Recovery z Applications General rectification z Features 1)Ultra low switching loss 2)High current overload capacity z Structure z Construction Silicon epitaxial planer type z Taping Dimensions(Unit : mm) z Absolute Maximum Ratings(Tc=25°C) Symbol Unit VRM V VR V Io A IFSM A Tj °C Tstg °C (*1) 1-3pin common circuit z Electrical Characteristics(Tj=25°C) Symbol Unit Forward voltage VF V Reverse current IR μA Reverse recovery time trr ns Thermal resistance Rth(j-c) °C/W Parameter Conditions Limits Repetitive peak reverse voltage Duty 0.5 350 Junction temperature 150 Reverse voltage Direct voltage 350 Average rectified foward current Tc=32°C 20 60Hz half sin wave , Resistive load Forward current surge peak 60Hz half sin wave , Non-repetitive at Tj=25°C (*1) 100 Storage temperature 55 to 150 Parameter Conditions Min. Typ. Max. IF=20A 1.3 1.5 VR=350V 0.05 10 IF=0.5A,IR=1A,Irr=0.25×IR 16 25 Junction to case 3.0 ROHM : LPDS JEITA : TO263S Manufacture Date RFUH20 NS3S LPDS 1/4 2012.06 - Rev.A AEC-Q101 Qualified |
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