A44 datasheet(2/4 Pages) BILIN

Part #	A44

Description	NPN Silicon Epitaxial Planar Transistor

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Manufacturer	BILIN [Galaxy Semi-Conductor Holdings Limited]

Direct Link	http://www.galaxycn.com

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Production specification

NPN Silicon Epitaxial Planar Transistor

A44

E015

www.gmicroelec.com

Rev.A

2

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Parameter

Symbol

Test

conditions

MIN.

MAX.

UNIT

Collector-base breakdown voltage

V(BR)CBO

IC=100μA,IE=0

500

-

V

Collector-emitter breakdown voltage

V(BR)CEO

IC=1.0mA,IB=0

400

-

V

Emitter-base breakdown voltage

V(BR)EBO

IE=10μA,IC=0

6

-

V

collector cut-off current

ICBO

IE = 0,VCB = 400V

-

0.1

μA

collector cut-off current

ICES

IB = 0,VCE = 400V

-

0.5

μA

emitter cut-off current

IEBO

IC = 0,VEB = 4V

-

0.1

μA

DC current gain

hFE

VCE =10V; IC=1mA

VCE =10V;IC =10mA

VCE =10V;IC =50mA

VCE =10V;IC =100mA

40

50

45

40

-

200

-

Collector-emitter saturation voltage

VCE(sat)

IC =1mA; IB =0.1mA

IC =10mA; IB =1mA

IC =50mA; IB =5mA

-

0.4

0.5

0.75

V

Base-emitter saturation voltage

VBE(sat)

IC =10mA; IB=1mA

-

0.75

V

Current gain bandwidth product

fT

VCE=20V,IC=10mA,f=100MHz

50

MHz

Output capacitance

Cob

VCB=10V,IE=0,f=1MHz

7

pF

TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

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