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A44 Datasheet(PDF) 2 Page - Galaxy Semi-Conductor Holdings Limited |
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A44 Datasheet(HTML) 2 Page - Galaxy Semi-Conductor Holdings Limited |
2 / 4 page Production specification NPN Silicon Epitaxial Planar Transistor A44 E015 www.gmicroelec.com Rev.A 2 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN. MAX. UNIT Collector-base breakdown voltage V(BR)CBO IC=100μA,IE=0 500 - V Collector-emitter breakdown voltage V(BR)CEO IC=1.0mA,IB=0 400 - V Emitter-base breakdown voltage V(BR)EBO IE=10μA,IC=0 6 - V collector cut-off current ICBO IE = 0,VCB = 400V - 0.1 μA collector cut-off current ICES IB = 0,VCE = 400V - 0.5 μA emitter cut-off current IEBO IC = 0,VEB = 4V - 0.1 μA DC current gain hFE VCE =10V; IC=1mA VCE =10V;IC =10mA VCE =10V;IC =50mA VCE =10V;IC =100mA 40 50 45 40 - 200 - - Collector-emitter saturation voltage VCE(sat) IC =1mA; IB =0.1mA IC =10mA; IB =1mA IC =50mA; IB =5mA - - - 0.4 0.5 0.75 V Base-emitter saturation voltage VBE(sat) IC =10mA; IB=1mA - 0.75 V Current gain bandwidth product fT VCE=20V,IC=10mA,f=100MHz 50 MHz Output capacitance Cob VCB=10V,IE=0,f=1MHz 7 pF TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified |
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