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AS4C64M16D3A-12BIN Datasheet(PDF) 2 Page - Alliance Semiconductor Corporation |
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AS4C64M16D3A-12BIN Datasheet(HTML) 2 Page - Alliance Semiconductor Corporation |
2 / 86 page Features • JEDEC Standard Compliant • Power supplies: VDD & VDDQ = +1.5V ± 0.075V • Operating temperature: • Supports JEDEC clock jitter specification • Fully synchronous operation • Fast clock rate: 800MHz • Differential Clock, CK & CK# • Bidirectional differential data strobe - DQS & DQS# • 8 internal banks for concurrent operation • 8n-bit prefetch architecture • Pipelined internal architecture • Precharge & active power down • Programmable Mode & Extended Mode registers • Additive Latency (AL): 0, CL-1, CL-2 • Programmable Burst lengths: 4, 8 • Burst type: Sequential / Interleave • Output Driver Impedance Control • 8192 refresh cycles / 64ms • Write Leveling • ZQ Calibration • Dynamic ODT (Rtt_Nom & Rtt_WR) • RoHS compliant • Auto Refresh and Self Refresh • 96-ball 8 x 13 x 1.0mm FBGA package - Pb and Halogen Free Overview The 1Gb Double-Data-Rate-3 DRAMs is double data rate architecture to achieve high-speed operation. It is internally configured as an eight bank DRAM. The 1Gb chip is organized as 8Mbit x 16 I/Os x 8 bank devices. These synchronous devices achieve high speed double-data-rate transfer rates of up to 1 600 Mb/sec/pin for general applications. The chip is designed to comply with all key DDR3 DRAM key features and all of the control and address inputs are synchronized with a pair of externally supplied differential clocks. Inputs are latched at the cross point of differential clocks (CK rising and CK# falling). All I/Os are synchronized with differential DQS pair in a source synchronous fashion. These devices operate with a single 1.5V ± 0.075V power supply and are available in BGA packages. Table1.OrderingInformation Product part No Org Temperature Max Clock (MHz) AS4C6 4M16D3A-12BCN 64M x 16 Commercial 0°C to 95°C 800 Package 96-ball FBGA Table2.SpeedGradeInformation Speed Grade Clock Frequency CAS Latency tRCD (ns) tRP (ns) DDR3-1600 800 MHz 11 13.75 13.75 AS4C6 4M16D3A-12BIN 64M x 16 Industrial -40°C to 95°C 800 96-ball FBGA AS4C64M16D3A-12BIN AS4C64M16D3A-12BCN Confidential - 2/86 - Rev.1.0 Aug.2016 Commercial: 0°C to 95°C (TC) Industrial :-40°C to 95°C (TC) - Average refresh period 7.8μs @ -40 ℃ ≦TC≦ +85℃ 3.9μs @ +85 ℃ <TC≦ +95℃ |
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