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2SC2881 Datasheet(PDF) 1 Page - Galaxy Semi-Conductor Holdings Limited |
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2SC2881 Datasheet(HTML) 1 Page - Galaxy Semi-Conductor Holdings Limited |
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1 / 4 page  Production specification NPN Silicon Epitaxial Planar Transistor 2SC2881 E026 www.gmicroelec.com Rev.A 1 FEATURES High voltage:VCEO=120V High transition frequency;fT=120MHz. PC=500mW. Complements the 2SA1201. APPLICATIONS Power and voltage amplifier application. SOT-89 ORDERING INFORMATION Type No. Marking Package Code 2SC2881 CO1/CY1 SOT-89 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value Units VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 0.8 A IB Base current 0.16 A PC Collector Dissipation 500 mW Tj,Tstg Junction and Storage Temperature -55 to +150 ℃ Pb Lead-free |
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