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KCH30A15 Datasheet(PDF) 1 Page - Thinki Semiconductor Co., Ltd. |
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KCH30A15 Datasheet(HTML) 1 Page - Thinki Semiconductor Co., Ltd. |
1 / 2 page FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O. Flame Retardant Epoxy Molding Compound. • Metal silicon junction, majority carrier conduction • Low power loss, high efficiency. • High current capability • Guardring for overvoltage protection • For use in low voltage,high frequency inverters free wheeling , and polarlity protection applications. • In compliance with EU RoHS 2002/95/EC directives MECHANICAL DATA • Case: TO-3PN/TO-3PB package outline • Terminals: solder plated, solderable per MIL-STD-750, Method 2026 • Polarity: As marked. • Mounting Position: Any • Weight: 0.2245 ounces, 6.3673 gram approximately ® KCH30A15/KRH30A15/KDH30A15/KSH30A15 Pb Free Plating Product KCH30A15/KRH30A15/KDH30A15/KSH30A15 30.0 Ampere Heatsink Dual Switch Mode Schottky Barrier Rectifiers Pb © 2006 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com/ Page 1/2 Rev.07 TO-3PN/TO-3PB Bottom Side Metal Heat Sink Positive Negative Doubler Common Cathode Case Case Case Common Anode Prefix "KCH" Tandem Polarity Case Series Tandem Polarity Suffix "KRH" Suffix "KDH" Suffix "KSH" MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 o C ambient temperature unless otherwise specified. Peak repetitive forward current (rated VR, square wave, 20KHz) Maximum instantaneous forward voltage @ IF= 15 A Maximum DC reverse current at rated DC blocking voltage @Tj=25 o C @Tj=125 o C SYMBOLS IFM VF IR 30 0.90 0.75 0.005 1.0 UNITS Maximum repetitive peak reverse voltage VRRM Maximum RMS voltage VRMS Maximum DC blocking voltage VDC MBR30150CFSH 150 105 150 Volts Typical junction capacitance (Note) CJ 250 pF Typical thermal resistance RθJA 75 ℃ / W Volts Maximum average forward rectified current I (AV) 30 Amps Amps Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) IFSM 275 Amps mA Storage temperature range TSTG -55 to +200 ℃ Operating junction temperature TJ 175 ℃ Note : Measured at 1.0MHz and applied reverse voltage of 4.0V. Tj=25 o C Tj=125 o C MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 o C ambient temperature unless otherwise specified. Peak repetitive forward current (rated VR, square wave, 20KHz) Maximum instantaneous forward voltage @ IF= 15 A Maximum DC reverse current at rated DC blocking voltage @Tj=25 o C @Tj=125 o C SYMBOLS IFM VF IR 30 0.90 0.75 0.005 1.0 UNITS Maximum repetitive peak reverse voltage VRRM Maximum RMS voltage VRMS Maximum DC blocking voltage VDC 150 105 150 Volts Typical junction capacitance (Note) CJ 250 pF Typical thermal resistance RθJA 1.4 ℃ / W Volts Maximum average forward rectified current I (AV) 30 Amps Amps Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) IFSM 275 Amps mA Storage temperature range TSTG -55 to +200 ℃ Operating junction temperature TJ 175 ℃ Note : Measured at 1.0MHz and applied reverse voltage of 4.0V. Tj=25 o C Tj=125 o C KCH30A15 KRH30A15 KDH30A15 KSH30A15 |
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