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KCH30A15 Datasheet(PDF) 1 Page - Thinki Semiconductor Co., Ltd.

Part # KCH30A15
Description  30.0 Ampere Heatsink Dual Switch Mode Schottky Barrier Rectifiers
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Manufacturer  THINKISEMI [Thinki Semiconductor Co., Ltd.]
Direct Link  http://www.thinkisemi.com
Logo THINKISEMI - Thinki Semiconductor Co., Ltd.

KCH30A15 Datasheet(HTML) 1 Page - Thinki Semiconductor Co., Ltd.

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FEATURES
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-O.
Flame Retardant Epoxy Molding Compound.
• Metal silicon junction, majority carrier conduction
• Low power loss, high efficiency.
• High current capability
• Guardring for overvoltage protection
• For use in low voltage,high frequency inverters
free wheeling , and polarlity protection applications.
• In compliance with EU RoHS 2002/95/EC directives
MECHANICAL DATA
• Case: TO-3PN/TO-3PB package outline
• Terminals: solder plated, solderable per MIL-STD-750, Method 2026
• Polarity: As marked.
• Mounting Position: Any
• Weight: 0.2245 ounces, 6.3673 gram approximately
®
KCH30A15/KRH30A15/KDH30A15/KSH30A15
Pb Free Plating Product
KCH30A15/KRH30A15/KDH30A15/KSH30A15
30.0 Ampere Heatsink Dual Switch Mode Schottky Barrier Rectifiers
Pb
© 2006 Thinki Semiconductor Co., Ltd.
http://www.thinkisemi.com/
Page 1/2
Rev.07
TO-3PN/TO-3PB
Bottom Side Metal Heat Sink
Positive
Negative
Doubler
Common Cathode
Case
Case
Case
Common Anode
Prefix "KCH"
Tandem Polarity
Case
Series
Tandem Polarity
Suffix "KRH"
Suffix "KDH"
Suffix "KSH"
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
o
C ambient temperature
unless otherwise specified.
Peak repetitive forward current
(rated VR, square wave, 20KHz)
Maximum instantaneous forward voltage
@ IF= 15 A
Maximum DC reverse current
at rated DC blocking voltage
@Tj=25
o
C
@Tj=125
o
C
SYMBOLS
IFM
VF
IR
30
0.90
0.75
0.005
1.0
UNITS
Maximum repetitive peak reverse voltage
VRRM
Maximum RMS voltage
VRMS
Maximum DC blocking voltage
VDC
MBR30150CFSH
150
105
150
Volts
Typical junction capacitance (Note)
CJ
250
pF
Typical thermal resistance
RθJA
75
℃ / W
Volts
Maximum average forward rectified current
I (AV)
30
Amps
Amps
Peak forward surge current 8.3ms single half sine-wave
superimposed on rated load (JEDEC Method)
IFSM
275
Amps
mA
Storage temperature range
TSTG
-55 to +200
Operating junction temperature
TJ
175
Note : Measured at 1.0MHz and applied reverse voltage of 4.0V.
Tj=25
o
C
Tj=125
o
C
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
o
C ambient temperature
unless otherwise specified.
Peak repetitive forward current
(rated VR, square wave, 20KHz)
Maximum instantaneous forward voltage
@ IF= 15 A
Maximum DC reverse current
at rated DC blocking voltage
@Tj=25
o
C
@Tj=125
o
C
SYMBOLS
IFM
VF
IR
30
0.90
0.75
0.005
1.0
UNITS
Maximum repetitive peak reverse voltage
VRRM
Maximum RMS voltage
VRMS
Maximum DC blocking voltage
VDC
150
105
150
Volts
Typical junction capacitance (Note)
CJ
250
pF
Typical thermal resistance
RθJA
1.4
℃ / W
Volts
Maximum average forward rectified current
I (AV)
30
Amps
Amps
Peak forward surge current 8.3ms single half sine-wave
superimposed on rated load (JEDEC Method)
IFSM
275
Amps
mA
Storage temperature range
TSTG
-55 to +200
Operating junction temperature
TJ
175
Note : Measured at 1.0MHz and applied reverse voltage of 4.0V.
Tj=25
o
C
Tj=125
o
C
KCH30A15 KRH30A15 KDH30A15 KSH30A15


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