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IRFU15N20D Datasheet(PDF) 1 Page - International Rectifier |
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IRFU15N20D Datasheet(HTML) 1 Page - International Rectifier |
1 / 10 page www.irf.com 1 7/25/01 IRFR15N20D IRFU15N20D SMPS MOSFET HEXFET® Power MOSFET VDSS RDS(on) max ID 200V 0.165 Ω 17A Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 17 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 12 A IDM Pulsed Drain Current 68 PD @TC = 25°C Power Dissipation 140 PD @TA = 25°C Power Dissipation* 3.0 W Linear Derating Factor 0.96 W/°C VGS Gate-to-Source Voltage ± 30 V dv/dt Peak Diode Recovery dv/dt 8.3 V/ns TJ Operating Junction and -55 to + 175 TSTG Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case ) °C Absolute Maximum Ratings Notes through
are on page 10 D-Pak IRFR15N20D I-Pak IRFU15N20D PD - 94245 l High frequency DC-DC converters Benefits Applications l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current Parameter Typ. Max. Units RθJC Junction-to-Case ––– 1.04 RθJA Junction-to-Ambient (PCB mount)* ––– 50 °C/W RθJA Junction-to-Ambient ––– 110 Thermal Resistance |
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