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IRKL170-14D20 Datasheet(PDF) 2 Page - International Rectifier |
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IRKL170-14D20 Datasheet(HTML) 2 Page - International Rectifier |
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2 / 6 page  IRK.170, .230, .250 Series 2 Bulletin I27102 rev. C 05/02 www.irf.com Parameters IRK.170 IRK.230 IRK.250 Units Conditions I T(AV) Maximum average on-state current 170 230 250 A 180o conduction, half sine wave @ Case temperature 85 85 85 o C I T(RMS) Maximum RMS on -state current 377 510 555 A as AC switch I TSM Maximum peak, one-cycle on-state, 5100 7500 8500 A t = 10ms No voltage non-repetitive surge current 5350 7850 8900 t = 8.3ms reapplied 4300 6300 7150 t = 10ms 100% V RRM 4500 6600 7500 t = 8.3ms reapplied Sinusoidal half wave, I2t Maximum I2t for fusing 131 280 361 KA2s t = 10ms No voltage initial T J = TJ max 119 256 330 t = 8.3ms reapplied 92.5 198 255 t = 10ms 100% V RRM 84.4 181 233 t = 8.3ms reapplied I2 √t Maximum I2 √t for fusing 1310 2800 3610 KA2 √s t = 0.1 to 10ms, no voltage reapplied V T(TO)1Low level value of threshold voltage 0.89 1.03 0.97 V (16.7% x πxI T(AV) < I < π x IT(AV)), TJ = TJ max. V T(TO)2High level value of threshold voltage 1.12 1.07 1.00 (I > π x I T(AV)), TJ = TJ max. r t1 Low level on-state slope resistance 1.34 0.77 0.60 m Ω (16.7% x πxI T(AV) < I < π x IT(AV)), TJ = TJ max. r t2 High level on-state slope resistance 0.96 0.73 0.57 (I > π x I T(AV)), TJ = TJ max. I TM = π x IT(AV), TJ = TJ max., 180 o conduction Av. power = V T(TO) x IT(AV) + rf x (IT(RMS)) 2 I H Maximum holding current 500 500 500 mA Anode supply=12V, initial I T=30A, TJ=25 o C I L Maximum latching current 1000 1000 1000 Anode supply=12V, resistive load=1 Ω gate pulse: 10V, 100 µs, T J = 25°C Type number Voltage V RRMVDRM , maximum V RSM , maximum non-repetitive I RRM IDRM max Code repetitive peak reverse and peak reverse voltage @ 130°C off-state blocking voltage VV m A 04 400 500 50 IRK.170- 08 800 900 IRK.250- 12 1200 1300 14 1400 1500 16 1600 1700 IRK.230- 08 800 900 50 12 1200 1300 16 1600 1700 18 1800 1900 20 2000 2100 t d Typical delay time 1.0 µsT J = 25 o C, Gate Current=1A dI g/dt=1A/µs t r Typical rise time 2.0 Vd = 0,67% V DRM I TM = 300 A ; -dI/dt=15 A/µs; TJ = TJ max ; Vr = 50 V; dV/dt = 20 V/µs ; Gate 0 V, 100 ohm Voltage Ratings ELECTRICAL SPECIFICATIONS On-state Conduction Switching t q Typical turn-off time 50 - 150 µs V TM Maximum on-state voltage drop 1.60 1.59 1.44 V Parameters IRK.170 IRK.230 IRK.250 Units Conditions |
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