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MMDT2227 Datasheet(PDF) 2 Page - Galaxy Semi-Conductor Holdings Limited

Part # MMDT2227
Description  Small Surface Mount Transistor
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Manufacturer  BILIN [Galaxy Semi-Conductor Holdings Limited]
Direct Link  http://www.galaxycn.com
Logo BILIN - Galaxy Semi-Conductor Holdings Limited

MMDT2227 Datasheet(HTML) 2 Page - Galaxy Semi-Conductor Holdings Limited

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Production specification
Small Surface Mount Transistor
MMDT2227
E026
www.gmicroelec.com
Rev.A
2
ELECTRICAL CHARACTERISTICS OF TR2 , NPN2222A SECTION
@ Ta=25
℃ unless otherwise specified
Parameter
Symbol
Test conditions
MIN
MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO IC=10μA,IE=0
75
-
V
Collector-emitter breakdown voltage
V(BR)CEO IC=10mA,IB=0
40
-
V
Emitter-base breakdown voltage
V(BR)EBO IE=10μA,IC=0
6
-
V
Collector cut-off current
ICBO
VCB=60V,IE=0
VCB=60V,IE=0,TA=150℃
-
10
10
nA
μA
Collector cut-off current
ICEX
VCE=60V, VEB(OFF)=3.0V
-
10
nA
Emitter cut-off current
IEBO
VEB=3V IC=0
-
10
nA
Base cut-off current
IBL
VCE=60V VEB(OFF)=3.0V
-
20
nA
DC current gain
hFE
VCE=10V,IC=100μA
VCE=10V,IC=1.00mA
VCE=10V,IC=10mA
VCE=10V,IC=150mA
VCE=10V,IC=500mA
VCE=10V,IC=10mA,TA=-55℃
VCE=1.0V,IC=150mA,
35
50
75
100
40
50
35
-
-
-
300
-
-
-
Collector-emitter saturation voltage
VCE(sat)
IC=150mA IB=15mA
IC=500mA IB=50mA
-
0.3
1.0
V
Base-emitter saturation voltage
VBE(sat)
IC=150mA IB=15mA
IC=500mA IB=50mA
0.6
-
1.2
2.0
V
Transition frequency
fT
VCE=20V,IC=20mA ,f=100MHz
300
-
MHz
Output Capacitance
Cobo
VCB=10V,f=1.0MHz,IE=0
-
8
pF
Input Capacitance
Cibo
VEB=0.5V,f=1.0MHz,IC=0
-
25
pF
Noise Figure
NF
VCE=10V,f=1.0kHz,IC=0.1mA
Rg=1.0KΩ,
-
4.0
dB
Delay Time
td
-
10
ns
Rise Time
tr
VCC=30V,IC=150mA,
VBE(off)=-0.5V,IB1=15mA
-
25
ns


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