MMDT2222A datasheet(2/3 Pages) BILIN

Part #	MMDT2222A

Description	Dual NPN Small Signal Surface Mount Transistor

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Manufacturer	BILIN [Galaxy Semi-Conductor Holdings Limited]

Direct Link	http://www.galaxycn.com

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2 / 3 page

Production specification

Dual NPN Small Signal Surface Mount Transistor

MMDT2222A

E001

www.gmicroelec.com

Rev.A

2

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Parameter

Symbol

Test conditions

MIN MAX

UNIT

Collector-base breakdown voltage

V(BR)CBO

IC=10μA IE=0

75

-

V

Collector-emitter breakdown voltage

V(BR)CEO

IC=10mA IB=0

40

-

V

Emitter-base breakdown voltage

V(BR)EBO

IE=10μA IC=0

6

-

V

Collector cut-off current

ICBO

VCB=60V IE=0

VCB=60V IE=0 TA=150℃

-

10

nA

μA

Collector cut-off current

ICEX

VCE=60V IEB(off)=3.0V

-

10

nA

Emitter cut-off current

IEBO

VEB=3V IC=0

-

10

nA

Base Cut-off Current

IBL

VCE=60V IEB(off)=3.0V

-

20

nA

VCE=10V IC=100μA

35

-

VCE=10V IC=1.0mA

50

-

VCE=10V IC=10mA

75

-

VCE=10V IC=150mA

100 300

VCE=10V IC=500mA

40

-

VCE=10V IC=10mA TA=-55℃

50

-

DC current gain

hFE

VCE=1.0V IC=150mA

35

-

Collector-emitter saturation voltage

VCE(sat)

IC=150mA IB=15mA

IC=500mA IB=50mA

-

0.3

1.0

V

Base-emitter saturation voltage

VBE(sat)

IC=150mA IB=15mA

IC=500mA IB=50mA

0.6

-

1.2

2.0

V

Transition frequency

fT

VCE=20V IC=20mA f=100MHz

300

MHz

Output Capacitance

Cobo

VCB=10V,f=1.0MHz,IE=0

-

8

pF

Input Capacitance

Cibo

VEB=0.5V,f=1.0MHz,IC=0

-

25

pF

Noise Figure

NF

VCE=10V,f=1.0kHz,IC=100μA

RS=1.0kΩ

-

4.0

dB

Delay time

td

10

ns

Rise time

tr

Vcc=30V, VBE(off)=-0.5V

IC=150mA , IB1= 15mA

25

ns

Storage time

ts

225

ns

Fall time

tf

VCC=30V, IC=150mA

IB1=-IB2=15mA

60

ns

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