IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:

4,835,592

4,881,106

5,017,508

5,049,961

5,187,117

5,486,715

4,850,072

4,931,844

5,034,796

5,063,307

5,237,481

5,381,025

IXYS reserves the right to change limits, test conditions, and dimensions.

Pulse Width - Seconds

0.00001

0.0001

0.001

0.01

0.1

1

0.001

0.01

0.1

1

D=0.2

V

0

100

200

300

400

500

600

0.1

1

10

100

Q

0

25

50

75

100

125

0

3

6

9

12

15

R

0

1020304050

0

2

4

6

8

0.0

0.5

1.0

1.5

2.0

T

I

0

204060

80

0.0

2.5

5.0

7.5

0.0

0.5

1.0

1.5

V

I

I

E

(ON)

E

(OFF)

E

(OFF)

E

(OFF)

T

R

dV/dt < 5V/ns

D=0.5

D=0.1

D=0.05

D=0.02

D=0.01

Single pulse

D = Duty Cycle

R

T

I

I

E

(OFF)

E

(ON)

E

(ON)

E

(ON)

Fig.11 Transient Thermal Impedance

Fig.9 Gate Charge Characteristic Curve

Fig.10 Turn-Off Safe Operating Area

Fig.7 Turn-Off Energy per Pulse and

Fig.8 Dependence of Turn-Off Energy

Fall Time on Collector Current

Per Pulse and Fall Time on R

G

IXSH/IXST 30N60B

IXSH/IXST 30N60C