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IXSH30N60B Datasheet(PDF) 4 Page - IXYS Corporation |
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IXSH30N60B Datasheet(HTML) 4 Page - IXYS Corporation |
4 / 4 page IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 IXYS reserves the right to change limits, test conditions, and dimensions. Pulse Width - Seconds 0.00001 0.0001 0.001 0.01 0.1 1 0.001 0.01 0.1 1 D=0.2 V CE - Volts 0 100 200 300 400 500 600 0.1 1 10 100 Q g - nanocoulombs 0 25 50 75 100 125 0 3 6 9 12 15 R G - Ohms 0 1020304050 0 2 4 6 8 0.0 0.5 1.0 1.5 2.0 T J = 125°C I C - Amperes 0 204060 80 0.0 2.5 5.0 7.5 0.0 0.5 1.0 1.5 V CE = 300V I C = 30A I C =30A E (ON) E (OFF) E (OFF) E (OFF) T J = 125°C R G = 4.7Ω dV/dt < 5V/ns D=0.5 D=0.1 D=0.05 D=0.02 D=0.01 Single pulse D = Duty Cycle R G = 10Ω T J = 125°C I C = 60A I C = 15A E (OFF) E (ON) E (ON) E (ON) Fig.11 Transient Thermal Impedance Fig.9 Gate Charge Characteristic Curve Fig.10 Turn-Off Safe Operating Area Fig.7 Turn-Off Energy per Pulse and Fig.8 Dependence of Turn-Off Energy Fall Time on Collector Current Per Pulse and Fall Time on R G IXSH/IXST 30N60B IXSH/IXST 30N60C |
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