Revision 1.1

K6F2008V2E Family

2

May 2003

CMOS SRAM

256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM

GENERAL DESCRIPTION

The K6F2008V2E families are fabricated by SAMSUNG

′s

advanced Full CMOS process technology. The families support

industrial temperature ranges for user flexibility of system

design. The families also supports low data retention voltage for

battery back-up operation with low data retention current.

FEATURES

• Process Technology: Full CMOS

• Organization: 256Kx8

• Power Supply Voltage: 3.0 ~ 3.6V

• Low Data Retention Voltage: 1.5V(Min)

• Three State Outputs

• Package Type: 32-TSOP1-0813.4F, 32-TSOP1-0813.4F(LF)

PIN DESCRIPTION

Name

Function

Name

Function

OE

Output Enable

Vcc

Power

WE

Write Enable Input

Vss

Ground

DNU

Do Not Use

FUNCTIONAL BLOCK DIAGRAM

PRODUCT FAMILY

1. The parameter is measured with 30pF test load.

°C and not 100% tested.

Product Family

Operating Temperature

Vcc Range

Speed(ns)

Power Dissipation

PKG Type

Standby

Operating

K6F2008V2E-F

Industrial(-40~85

°C)

3.0~3.6V

0.5

3mA

32-TSOP1-0813.4F

32-TSOP1-0813.4F(LF)

SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice.

Precharge circuit.

Memory array

1024 rows

256x8 columns

I/O Circuit

Column select

Clk gen.

Row

select

Data

cont

Data

cont

CS1

CS2

WE

OE

Control

logic

Address

A11

A9

A8

A13

WE

CS2

A15

VCC

A17

A16

A14

A12

A7

A6

A5

A4

OE

A10

CS1

I/O8

I/O7

I/O6

I/O5

I/O4

VSS

I/O3

I/O2

I/O1

A0

A1

A2

A3

32-sTSOP

Type1-Forward

32

31

30

29

28

27

26

25

24

23

22

21

20

19

18

17

1

2

3

4

5

6

7

8

9

10

11

12

13

14

15

16