BAS70 datasheet(2/14 Pages) STMICROELECTRONICS

Part #	BAS70

Description	Low forward and reverse recovery times

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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Characteristics

BAS70

2/14

Doc ID 12563 Rev 2

1

Characteristics

Table 2.

Absolute ratings (limiting values at Tj = 25 °C, unless otherwise specified)

Symbol

Parameter

Value

Unit

VRRM

Repetitive peak reverse voltage

70

V

IF

Continuous forward current

70

mA

IFSM

Surge non repetitive forward current tp = 10 ms Sinusoidal

1

A

Tstg

Storage temperature range

- 65 to +150

°C

Tj

Maximum operating junction temperature

150

°C

TL

Maximum soldering temperature

260

°C

Table 3.

Thermal parameters

Symbol

Parameter

Value

Unit

Rth(j-a)

Junction to ambient(1)

1.

Epoxy printed circuit board with recommended pad layout

SOD-123, SOT-23

500

°C/W

SOT-323, SOD-323

550

SOD-523, SOT-666

600

Table 4.

Static electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

IR

(1)

1.

Pulse test: tp = 5 ms, δ < 2 %

Reverse leakage current

Tj = 25 °C

VR = 50 V

100

nA

VR = 70 V

10

µA

VF

(2)

2.

Pulse test: tp = 380 µs, δ < 2 %

Forward voltage drop

Tj = 25 °C

IF = 1 mA

410

mV

IF = 10 mA

750

IF = 15 mA

1000

Table 5.

Dynamic characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

C

Diode capacitance

VR = 0 V, F = 1 MHz

2

pF

RF

Differential forward

resistance

IF = 10 mA, F = 100 MHz

30

Ω

LS

Series inductance

1.5

nH

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