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PE42420LGBB-Z Datasheet(PDF) 1 Page - Peregrine Semiconductor |
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PE42420LGBB-Z Datasheet(HTML) 1 Page - Peregrine Semiconductor |
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1 / 12 page  Page 1 of 12 Document No. DOC-78041-1 │ www.psemi.com ©2016 Peregrine Semiconductor Corp. All rights reserved. Figure 1. Functional Diagram Product Specification UltraCMOS® SPDT RF Switch 100–6000 MHz PE42420 Features HaRP™ technology enhanced No gate and phase lag No drift in insertion loss and phase High linearity IIP3 of 65 dBm High isolation 69 dB @ 1 GHz 62 dB @ 3 GHz 50 dB @ 6 GHz Supports +1.8V control logic +105 °C operating temperature High ESD tolerance 4 kV HBM on RFC 2 kV HBM on all other pins Product Description The PE42420 is a HaRP™ technology-enhanced absorptive SPDT RF switch designed for use in 3G/4G wireless infrastructure and other high performance RF applications. It is ideal for transmit path switching, RF and IF signal routing, AGC loops, and filter bank switching applications. This general purpose switch is comprised of two symmetric RF ports and has exceptional port to port isolation up to 6 GHz. An integrated CMOS decoder facilitates a two-pin low voltage CMOS control interface. In addition, no external blocking capacitors are required if 0 VDC is present on the RF ports. The PE42420 is manufactured on Peregrine’s UltraCMOS® process, a patented variation of silicon-on-insulator (SOI) technology on a sapphire substrate. Peregrine’s HaRP technology enhancements deliver high linearity and excellent harmonics performance. It is an innovative feature of the UltraCMOS process, offering the performance of GaAs with the economy and integration of conventional CMOS. Figure 2. Package Type 20-lead 4 × 4 mm LGA DOC-02177 |
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