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MMBT5550 Datasheet(PDF) 1 Page - Galaxy Semi-Conductor Holdings Limited |
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MMBT5550 Datasheet(HTML) 1 Page - Galaxy Semi-Conductor Holdings Limited |
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1 / 4 page  Production specification NPN General Purpose Amplifier MMBT5550 C117 www.gmicroelec.com Rev.A 1 FEATURES Epitaxial planar die construction. Ultra-small surface mount package. APPLICATIONS High voltage transistors. General purpose application. SOT-23 ORDERING INFORMATION Type No. Marking Package Code MMBT5550 M1F SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value Unit VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 140 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 600 mA PC Collector Dissipation 300 mW RθJA Thermal resistance,Junction to ambient 417 ℃ /W Tj,Tstg Junction and Storage Temperature -55 to+150 ℃ Pb Lead-free |
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